PART |
Description |
Maker |
GS8662D09E-333I GS8662D08E GS8662D09GE-200I GS8662 |
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.45 ns, PBGA165 72Mb SigmaQuad-II Burst of 4 SRAM 72Mb SigmaQuad -Ⅱ的4 SRAM的突 72Mb SigmaQuad-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.45 ns, PBGA165 72Mb SigmaQuad-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.5 ns, PBGA165 72Mb SigmaQuad-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
GS864032T-167IV GS864032T-200IV GS864032T-200V GS8 |
4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 8 ns, PQFP100 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 2M X 32 CACHE SRAM, 7.5 ns, PQFP100 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 4米1800万3200万36 72Mb同步突发静态存储器
|
GSI Technology, Inc.
|
GS8640Z18T-V GS8640Z18T-250V GS8640Z18T-250IV |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 72Mb流水线和流量,通过同步唑的SRAM 72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
GS864436B-166I GS864472C-166 GS864418B-150I GS8644 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 7 ns, PBGA119 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 1M X 72 CACHE SRAM, 7 ns, PBGA209 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA119 4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc.
|
GS864032 GS864018 GS864036 |
72Mb Burst SRAMs
|
GSI Technology
|
GS8642Z18 GS8642Z36 |
72Mb NBT SRAMs
|
GSI Technology
|
K7I643684M-FI30 K7I641884M K7I641884M-CE25 K7I6418 |
72Mb DDRII SRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
GS864018T-XXX |
(GS8640xxT) 4M x 18/ 2M x 32/ 2M x 36 72Mb Sync Burst SRAMs
|
GSI Technology
|
GS8642Z18B-300 GS8642Z18B-300I GS8642Z18B-250 GS86 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
GS8641V36 GS8641V18 GS8641V32 GS8641V32E-200IT |
2M X 32 CACHE SRAM, 7.5 ns, PBGA165 72Mb Burst SRAMs
|
GSI Technology
|
|